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• W2040808410 abstract "Raman-scattering measurements have been performed on c-Si and a-Si over a wide range of frequencies, including Stokes and anti-Stokes sides, and up to fourth order. All the features are accounted for by using the same physical parameters in both phases. In particular, it is shown that multiple-order scattering processes are not negligible, but rather of the same order of magnitude as first-order processes. In amorphous materials, light-scattering excess, spurious background, Boson-peak or hot-luminescence processes, which have been recently put forward, turn out to be mainly caused by high-order Raman-scattering processes." @default.
• W2040808410 created "2016-06-24" @default.
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• W2040808410 date "1993-09-01" @default.
• W2040808410 modified "2023-10-16" @default.
• W2040808410 title "Multiple-order Raman scattering in crystalline and amorphous silicon" @default.
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• W2040808410 doi "https://doi.org/10.1103/physrevb.48.6024" @default.
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