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- W2040881949 abstract "Nanopolyaniline/p-type porous silicon (NPANI/PSi) heterojunction films were chemically fabricated via in situ polymerization. The composition and morphology of the nanopolymer were confirmed using Fourier transform infrared, scanning electron microscopy, UV-visible, and transmission electron microscopy techniques. The results indicated that the polymerization took place throughout the porous layer. The I-V measurements, performed at different temperatures, enabled the calculation of ideality factor, barrier height, and series resistance of those films. The obtained ideality factor showed a nonideal diode behavior. The series resistance was found to decrease with increasing temperature." @default.
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- W2040881949 date "2013-01-01" @default.
- W2040881949 modified "2023-09-26" @default.
- W2040881949 title "Electrical Characterization of Nanopolyaniline/Porous Silicon Heterojunction at High Temperatures" @default.
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- W2040881949 doi "https://doi.org/10.1155/2013/568175" @default.
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