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- W2040913346 abstract "In-polarity InN films were grown by radio frequency plasma-assisted molecular-beam epitaxy and their structural properties as a function of III/V beam-flux ratio were investigated. It was found that the window for the surface stoichiometry to achieve high quality InN films was very narrow; only 11% change in In beam-equivalent pressure drastically affected surface morphology and structural property. This is because the upper-limited growth temperature of the In-polarity growth is as low as about 500 °C. Under the growth condition around the unity stoichiometry, a step-flow-like surface with a 2 mono-layer step height was obtained in the In-polarity growth. Best values for the measurements of structural and electrical properties were as follows; full width at half maximum of X-ray rocking curves were 645 arcsec and 1425 arcsec for (0002) and (10-12) reflections, respectively and the electron concentration and mobility were 1.3×1018 cm–3 and 1650 cm2/V s, respectively. Furthermore, we tried to fabricate In-polarity InN/GaN multi-quantum wells with a 1 mono-layer InN well thickness. A result of X-ray 2θ–ω scan showed clearly satellite peaks up to 2nd order and fringe peaks, which indicates that a fine periodic structure is achieved in the In-polarity MQWs. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)" @default.
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- W2040913346 date "2006-06-01" @default.
- W2040913346 modified "2023-09-26" @default.
- W2040913346 title "Towards fabrication of In-polar InN films and InN/GaN MQWs" @default.
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- W2040913346 doi "https://doi.org/10.1002/pssc.200565353" @default.
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