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- W2040980105 abstract "We have investigated a sputter-deposited Al2O3/HfO2 stack as a blocking layer of metal–oxide–nitride–oxide–silicon capacitors. Compared with a SiO2 blocking layer, the sample with Al2O3/HfO2 stack shows lower write/erase (W/E) voltage, higher speed, and longer data retention time. The improvement of electrical characteristics can be explained by lower leakage current density and less voltage drop of high-k blocking layer which in turn increase the effective thickness of tunneling oxide. After stressing the W/E voltage of ±10 V voltage for 1 ms, the flat-band voltage shift of 4 V and 10 years of retention time was obtained." @default.
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- W2040980105 date "2003-09-30" @default.
- W2040980105 modified "2023-10-16" @default.
- W2040980105 title "Improved metal–oxide–nitride–oxide–silicon-type flash device with high-k dielectrics for blocking layer" @default.
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- W2040980105 doi "https://doi.org/10.1063/1.1609650" @default.
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