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• W2040983617 abstract "A piezoelectric film combined with high velocity substrate as sapphire or diamond, seems very promising for surface acoustic wave (SAW) devices operating at high frequency. In this work, we concentrated on the optimization of growth parameters to perform AlN films with required properties for SAW devices: high resistivity, low roughness and high piezoelectricity coupling. AlN films are deposited by reactive DC magnetron sputtering on silicon substrate as a function of N2 concentration in Ar–N2 gas mixtures. The duration of the process was modulated to obtain a constant film thickness (2 μm) to permit a better comparison. X-Ray diffraction (XRD) shows that the AlN films deposited in the range of 20–100% N2, 400 °C, and 6×10−3 mbar, exhibit a columnar structure textured in (002) orientation corresponding to hexagonal wurtzite structure with a c-axis perpendicular to the surface. In regard to XRD and electrical characterizations, the optimum film properties are obtained in the range of 60–80% N2 concentration. The higher peak intensity of (002) AlN diffraction and the higher resistivity are obtained for the AlN films synthesized with 75% N2. AFM analysis of AlN films demonstrate a low roughness at approximately 3 nm. The SAW device (filter) was formed by development of interdigital transducers of 32 μm wavelength on the AlN/Si structure by photolithography. The frequency response shows a center frequency of 158 MHz corresponding to a phase velocity of 5055 m/s. This value is almost constant for all samples performed at optimum conditions. However, the insertion loss of device seems varies with N2 percentage and the low attenuation is obtained with 70% of N2. This study is extrapolated on a sapphire substrate, and a phase velocity of 5536 m/s is recorded showing the effect of substrate to increase the center frequency of SAW devices." @default.
• W2040983617 created "2016-06-24" @default.
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• W2040983617 date "2002-03-01" @default.
• W2040983617 modified "2023-10-14" @default.
• W2040983617 title "Reactive DC magnetron sputtering of aluminum nitride films for surface acoustic wave devices" @default.
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• W2040983617 doi "https://doi.org/10.1016/s0925-9635(01)00708-7" @default.
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