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• W2040984994 abstract "Ion-implanted silicon and GaP were investigated by ellipsometry and channelling effect measurements to determine the validity of the Bruggeman thoery for partially amorphous layers. It was found that the effective medium approximation (EMA) gives a satisfactory description of the disordered layer for heavy ions and low doses. The thickness of the disordered layer and the degree of amorphousness are independent parameters and can be determined from ellipsometry alone. Low dose nitrogen implantation is cited as an example of the limitations of EMA." @default.
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• W2040984994 date "1984-06-01" @default.
• W2040984994 modified "2023-09-26" @default.
• W2040984994 title "Investigation of ion-implanted semiconductors by ellipsometry and backscattering spectrometry" @default.
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• W2040984994 doi "https://doi.org/10.1016/0040-6090(84)90423-1" @default.
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