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- W2040998664 abstract "Here we investigate theoretically the phonon-assisted spin relaxation of holes in Ge/Si quantum dots (QD). This mechanism is dominant for an isolated QD in external magnetic field <i>H</i>≥O.1 T. In the temperature range <i>T</i><60 K there are two competitive phonon-assisted spin flip processes: direct one-phonon process (first-order to perturbative strain field) and Raman-type process (second-order). In the framework of tight-binding approximation, relaxation times τ<sup>(1)</sup> and τ<sup>(2)</sup>, corresponding to these processes, were obtained. The relaxation time τ<sup>(1)</sup> weakly depends on temperature: τ<sup>(1)</sup>→const for <i>T</i>→0 (spontaneous transitions) and τ<sup>(1)</sup>~<i>T</i><sup>-1</sup> for higher <i>T</i> (when induced transitions are dominant). Magnetic field dependence of τ<sup>(1)</sup> is rather strong: τ<sup>(1)</sup>~<i>H</i><sup>-5</sup>, while the rate of Raman-type processes is almost field-independent when <i>T</i>><i>gβH</i>/<i>k</i> and strongly depends on the temperature: τ<sup>(2)</sup>~<i>T</i><sup>-7</sup>." @default.
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- W2040998664 date "2006-05-24" @default.
- W2040998664 modified "2023-10-16" @default.
- W2040998664 title "<title>Spin relaxation of holes in Ge quantum dots</title>" @default.
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- W2040998664 doi "https://doi.org/10.1117/12.677158" @default.
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