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• W2041013403 abstract "Single crystals of gem quality diopside (with Fe/(Ca+Mg+Fe) ≃ 0.02) were deformed in a dead load apparatus under controlled oxygen partial pressure ( p O 2 ), in the range 8×10 −14 –2×10 −9 MPa, at two temperatures T 1 = 1100°C and T 2 = 1200°C. The aim of these experiments was to investigate the sensitivity of diopside creep rate to p O 2 at these two temperatures. T 1 and T 2 are on both sides of a critical temperature T c ≃ 1130°–1140°C at which the activation energy E * of the creep rate decreases (from 442 to 48 kJ/mol) with rising temperature (Raterron and Jaoul, 1991) when siliceous microdroplets (≃0.1 μm in size) form (Ingrin et al., 1991). Specimens were deformed with axial compressive stress σ (110–143 MPa) along [010]; with this setting, the {110}1/2〈 a ± b 〉 slip systems are symetrically activated, and strain rates are in the range 2×10 −8 –2×10 −7 s −1 . At T 1 and under low p O 2 , we find for samples that lack SiO 2 ‐rich precipitates in the host. At T 2 and at the highest p O 2 explored, becomes insensitive to p O 2 for samples that contain SiO 2 ‐rich precipitates in the matrix. Electrical conductivity σ e shows similar sensitivities to p O 2 (Huebner and Voigt, 1988). We propose a point defect model based on the chemistry of nonstoichiometric compounds with cationic vacancies and ferric iron Fe 3+ as majority point defects. The model predicts the critical values of T c and p O 2 c beyond which the increasing abundance of the majority point defects promotes SiO 2 precipitation. T c and p O 2c values are interdependent; they are also functions of Fe content in diopside and of its initial nonstoichiometry. This model offers an explanation of the p O 2 dependencies of point defects concentrations as well. A comparison with experimental and σ e sensitivities to p O 2 suggests that interstitial divalent cations, which are minority defects, control electrical transport and diffusion‐assisted dislocation glide. The model also shows that the occurrence of SiO 2 precipitation does not necessarily imply a supersilicic starting material." @default.
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• W2041013403 date "1994-05-10" @default.
• W2041013403 modified "2023-10-13" @default.
• W2041013403 title "High‐temperature deformation of diopside crystal: 3. Influences of <i>p</i>O₂ and SiO₂ precipitation" @default.
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• W2041013403 doi "https://doi.org/10.1029/93jb03363" @default.
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