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• W2041036678 abstract "Using a high sensitivity rotating light-pipe reflectometer, we have studied the anodization and dissolution process for GaAs oxide films in situ using a tartaric acid/glycol/water electrolyte. Different stages in the oxidation-dissolution process can be easily identified, and the film thickness can be calibrated interferometrically in situ. In conjunction with this study, we have investigated the electrolyte electroreflectance spectra of GaAs in the vicinity of the E0 transition (direct gap at k = 0), and have observed a pronounced excitonic feature which is very sensitive to surface fields. We have identified this effect as a type of interference phenomenon within the semiconductor depletion region. This feature and the observed Franz-Keldysh oscillations are thus used to optically study the surface electric fields and interface states, with and without an oxide layer." @default.
• W2041036678 created "2016-06-24" @default.
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• W2041036678 date "1980-12-01" @default.
• W2041036678 modified "2023-09-26" @default.
• W2041036678 title "Optical and modulated optical investigation of the semiconductor-oxide-electrolyte interface in GaAs" @default.
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• W2041036678 doi "https://doi.org/10.1016/0039-6028(80)90620-2" @default.
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