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- W2041104555 abstract "Measurements of emitter resistance have been made on arsenic- and phosphorus-doped polysilicon emitter bipolar transistors, fabricated with or without an interfacial oxide layer. It is found that the emitter resistance of phosphorus-doped transistors is considerably lower than that of arsenic-doped transistors. In addition the presence of a deliberately grown interfacial oxide layer leads to a significant increase in emitter resistance for both arsenic- and phosphorus-doped devices." @default.
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- W2041104555 title "Emitter resistance of arsenic- and phosphorus-doped polysilicon emitter transistors" @default.
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