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• W2041128254 abstract "We show, for the first time, that E′ centers can be generated in hot hole stressing of short channel metal oxide silicon field effect transistors (MOSFETs). Prior to this study only Pb centers had been directly linked to this stressing phenomena." @default.
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• W2041128254 date "1997-06-01" @default.
• W2041128254 modified "2023-10-18" @default.
• W2041128254 title "Identification of the microscopic structure of new hot carrier damage centers in short channel MOSFETs" @default.
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• W2041128254 doi "https://doi.org/10.1016/s0167-9317(97)00062-2" @default.
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