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• W2041283326 abstract "We have conducted an in situ study of the Fermi-level pinning behavior of n- and p-type GaAs (001) surfaces in the ultrahigh-vacuum environment of a molecular-beam-epitaxy chamber using photoreflectance. As-grown surfaces as well as the effects of a few monolayers of arsenic deposition/desorption were investigated. The measured barrier heights of the as-grown n (${mathit{V}}_{mathit{B},}$n)- and p (${mathit{V}}_{mathit{B},}$p)-type samples (relative to their respective band edges) were 0.61 V (midgap pinning taking into account the photovoltaic effect) and 0.33 V, respectively The in situ deposition of a few monolayers of arsenic had no effect on ${mathit{V}}_{mathit{B},}$n but caused ${mathit{V}}_{mathit{B},}$p to increase to 0.60 V, i.e., midgap pinning. The desorption of the arsenic layers brought ${mathit{V}}_{mathit{B},}$p close to its as-grown value but had no effect on ${mathit{V}}_{mathit{B},}$n. These observations, together with earlier studies on similar but air-stabilized samples, provides evidence that As plays a crucial role in the formation of the surface Fermi levels." @default.
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• W2041283326 date "1995-08-15" @default.
• W2041283326 modified "2023-09-25" @default.
• W2041283326 title "In situstudy of Fermi-level pinning onn- andp-type GaAs (001) grown by molecular-beam epitaxy using photoreflectance" @default.
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• W2041283326 doi "https://doi.org/10.1103/physrevb.52.4674" @default.
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