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• W2041446670 abstract "The kinetics of gallium incorporation during gas source molecular beam epitaxy (GSMBE) growth of GaN are investigated for varying substrate temperature (Ts) and incident ammonia flux (JNH3). Incident Ga atoms eventually either (1) react with NH3 to form GaN, (2) accumulate on the film surface, or (3) desorb. For an incident Ga flux (JGa) of 0.30 monolayer/s and an incident flux ratio of JNH3JGa ∼ 103, desorption of Ga is significant for Ts above ∼ 700°C, and Ga surface accumulation is significant for Ts below ∼ 750°C. Two distinct activation energies for Ga desorption are observed: 1.4 ± 0.1 eV for 625°C < Ts < 740°C and 0.4 ± 0.1 eV for 740°C < Ts < 825°C. The rates of Ga desorption and Ga surface accumulation are both suppressed by increasing JNH3. These effects combine to produce a GaN formation rate which increases with increasing JNH3 and which peaks at Ts ∼ 750°C over the range of JNH3 investigated. These results are consistent with a model based on the Ts-dependent reactivity of NH3 towards Ga and indicate the presence of a relatively complex surface chemistry, with a strong likelihood that hydrogen is playing an important role." @default.
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• W2041446670 date "1997-02-01" @default.
• W2041446670 modified "2023-10-03" @default.
• W2041446670 title "Gallium incorporation kinetics during gas source molecular beam epitaxy growth of GaN" @default.
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• W2041446670 doi "https://doi.org/10.1016/s0038-1101(96)00241-9" @default.
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