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- W2041507914 abstract "Silicon-tin oxide heterojunctions were prepared by chemical vapor deposition of undoped as well as antimony-doped tin oxide on n-type silicon at 300 °C. Diode current-voltage (ID-V) and reverse capacitance-voltage (C-V) characteristics were measured in the temperature range of 294–394 K. The C-V measurements were taken at a number of frequencies f. The experimental data on diode quality factor n and semilogarithmic plots of the zero-bias current density intercept J0D vs T−1, and also of J0D vs T, indicated that the dominant carrier transport mechanism could be recombination generation in the case of undoped tin oxide, and trap-assisted tunneling in the case of antimony-doped tin oxide. The reverse C−2(V, T, f) characteristics indicated high barrier heights for all devices, but the presence of a much larger density of traps in the case of antimony-doped SnO2/n-Si heterojunctions than in the case of undoped SnO2/n-Si devices." @default.
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- W2041507914 date "1984-11-15" @default.
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- W2041507914 title "Electrical characteristics of silicon-tin oxide heterojunctions prepared by chemical vapor deposition" @default.
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- W2041507914 doi "https://doi.org/10.1063/1.333815" @default.
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