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- W2041567896 abstract "Here we present the first successful growth and spectroscopic investigation of In(Ga)As/GaAs (111) quantum dots (QD). These QD were recently predicted as promising emitters of entangled photon pairs due to their intrinsic threefold degenerate symmetry resulting in zero fine structure splitting (FSS). Low spatial densities of the QDs were grown by droplet epitaxy in an MBE system. Emission of truly single photons is proved by correlation measurements. Using spatially-resolved power- and polarization- dependent experiments we discovered the characteristic excitonic luminescence fingerprints from a number of QDs. Excitonic FSS below 10 μeV, our resolution limit, is observed in agreement with our predictions." @default.
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- W2041567896 date "2010-09-01" @default.
- W2041567896 modified "2023-10-01" @default.
- W2041567896 title "In(Ga)As quantum dots grown on GaAs(111) substrates for entangled photons pairs" @default.
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- W2041567896 doi "https://doi.org/10.1088/1742-6596/245/1/012003" @default.
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