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- W2041664482 abstract "The formation mechanism of one-dimensional Si islands on a $mathrm{H}/mathrm{Si}(001)mathrm{text{ensuremath{-}}}(2ifmmodetimeselsetexttimesfi{}1)$ surface is studied using scanning tunneling microscopy/spectroscopy and first-principles calculations. We observed that one-dimensional islands that are made from dimer chains are formed at the initial growth stages similar to the bare Si(001) surface. It is found that the number of odd-numbered dimer chains is larger than that of even-numbered dimer chains. We propose the growth processes of the two types of growth edges to explain the observation." @default.
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- W2041664482 date "2008-01-14" @default.
- W2041664482 modified "2023-10-02" @default.
- W2041664482 title "Formation Mechanism of One-Dimensional Si Islands on a<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline><mml:mi mathvariant=normal>H</mml:mi><mml:mo>/</mml:mo><mml:mi>Si</mml:mi><mml:mo stretchy=false>(</mml:mo><mml:mn>001</mml:mn><mml:mo stretchy=false>)</mml:mo></mml:math>Surface" @default.
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- W2041664482 doi "https://doi.org/10.1103/physrevlett.100.026102" @default.
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