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- W2041689929 abstract "Polycrystalline Si (poly-Si) has found various applications in microelectronics and micromechanical devices such as pressure sensors, accelerometers and actuators. Poly-Si films deposited on an oxidized Si substrate can combine the excellent mechanical properties of Si with the efficient electrical insulation of poly-Si piezoresistors, so that improved stability and high-temperature operation can be obtained. Different poly-Si fabrication techniques are reviewed with emphasis on their applications to pressure sensors. The theoretical interpretation and models of the piezoresistivity in poly-Si and experimental results are presented. The calculation of the longitudinal and transverse gauge factors and their correlation with the crystallographic structure of the poly-Si film are discussed. The possibility of sensor performance optimization including mechanical, temperature and piezoresistive properties of a device is demonstrated. Two examples of commercially manufactured poly-Si sensors and an example of a new poly-Si technology are also presented." @default.
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- W2041689929 date "1991-07-01" @default.
- W2041689929 modified "2023-10-06" @default.
- W2041689929 title "Piezoresistive pressure sensors based on polycrystalline silicon" @default.
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- W2041689929 doi "https://doi.org/10.1016/0924-4247(91)85020-o" @default.
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