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• W2041716875 abstract "We present a simple and useful method for preparing high-quality nanocrystalline ZnO thin films, i.e. the thermal oxidation of high-quality ZnS films prepared by the low-pressure metal-organic chemical vapour deposition technique. The x-ray diffraction measurements reveal that the nanocrystalline ZnO has a hexagonal wurtzite structure. Raman spectra show that the longitudinal optical phonon with the E1-mode appears at 578 cm-1. The multiple phonon scattering process is also observed, indicating the formation of a high-quality nanocrystalline ZnO thin film. The photoluminescence spectrum has a single emission peak at 3.264 eV from the free-exciton mission, under the condition of low excitation power at room temperature. However, when excitation intensities exceed the threshold of 150 kW/cm2, a new and narrow peak emerges at lower energies, which are attributed to exciton-exciton collisions, and is called the P line. The intensity of this peak increases superlinearly with the pumping power over a threshold value. This supplies strong evidence of stimulated emission. The multiple longitudinal cavity modes observed in the stimulated emission spectrum indicate the successful realization of optically pumped lasing from nanocrystalline ZnO films at room temperature." @default.
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• W2041716875 date "2001-12-19" @default.
• W2041716875 modified "2023-09-28" @default.
• W2041716875 title "Photoluminescence and Optically Pumped Ultraviolet Lasing from Nanocrystalline ZnO Thin Films Prepared by Thermal Oxidation of High-Quality ZnS Thin Films" @default.
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• W2041716875 doi "https://doi.org/10.1088/0256-307x/19/1/340" @default.
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