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- W2041725934 abstract "Abstract Thin film CdS/CdTe solar cells have been prepared by conventional vacuum deposition technique. Deep level transient spectroscopy (DLTS), temperature and frequency dependent capacitance–voltage ( C – V ) measurements were utilised to investigate the performance limiting defect states in the CdTe layer subjected to the post deposition treatments such as CdCl 2 -dipping and/or annealing in air. Five hole traps, all of which have been previously reported in the literature, were identified in as-grown CdTe at 0.19, 0.20, 0.22, 0.30 and 0.40 eV above the valence band. A single hole trap level has been evidenced at 0.45 eV after both post deposition heat and CdCl 2 treatments." @default.
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- W2041725934 date "2004-11-01" @default.
- W2041725934 modified "2023-10-16" @default.
- W2041725934 title "Investigation of the effect of CdCl2 processing on vacuum deposited CdS/CdTe thin film solar cells by DLTS" @default.
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- W2041725934 doi "https://doi.org/10.1016/j.jpcs.2004.06.005" @default.
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