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• W2041765687 abstract "We report the results of grazing incidence small angle x-ray scattering experiments on the nucleation and growth of atomic layer deposited HfO2 films. The scattering features are internal (porosity) and external (roughness) surfaces. Films grown on H-terminated Si exhibit greater scattering than films grown on chemically oxidized Si. The films grown on H-terminated Si may be as much as 50% porous. Characteristic scattering feature sizes are those of the film nuclei, about 2 nm, which then coalesce and become inherited features of the films. Films grown on chemically oxidized Si are observed to coalesce at about 25 growth cycles." @default.
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• W2041765687 date "2006-01-16" @default.
• W2041765687 modified "2023-10-18" @default.
• W2041765687 title "Nucleation of atomic-layer-deposited HfO2 films, and evolution of their microstructure, studied by grazing incidence small angle x-ray scattering using synchrotron radiation" @default.
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• W2041765687 doi "https://doi.org/10.1063/1.2164417" @default.
• W2041765687 hasPublicationYear "2006" @default.
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