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- W2041782908 abstract "Abstract In this study, we investigate as-deposited Ta3N5–Ag nanocomposite thin films with near-zero temperature coefficients of resistance (TCRs) that are fabricated by a reactive co-sputtering method; these films can be used in thin-film embedded resistors. In these films, the TCR approaches zero due to compensation between Ag (+TCR) and Ta–N (−TCR) at resistivities higher than 0.005 Ω-cm. Taking into account the fact that Ag counterbalances the resistivity of the Ta3N5–Ag thin film, we performed reactive co-sputtering at a nitrogen partial pressure of 55%, corresponding to a resistivity of 0.384 Ω-cm. The resistivity and power density changed, respectively, from 1.333 Ω-cm and 0.44 W/cm2 for silver to 0.0059 Ω-cm and 0.94 W/cm2 for the Ta3N5–Ag thin film. A near-zero TCR of + 34 ppm/K was obtained at 0.94 W/cm2 in the Ta3N5–Ag thin film without heat treatment." @default.
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- W2041782908 date "2008-06-01" @default.
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- W2041782908 title "Fabrication of Ta3N5–Ag nanocomposite thin films with high resistivity and near-zero temperature coefficient of resistance" @default.
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- W2041782908 doi "https://doi.org/10.1016/j.tsf.2007.07.021" @default.
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