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• W2041965210 abstract "A qualitative dependence of polytype structures 6H, 15R, and 3C on the partial pressure of nitrogen in the interval 4 to 760 Torr is obtained by optical and X-ray studies of SiC epitaxial layers, grown by recrystallization in the gaseous phase at 1900 to 2300°C. The morphological peculiarities of β-SiC epitaxial layers, grown on the (0001) and (0001) faces of the α-SiC substrate are determined. The strained regions of the α-SiC monocrystals, due to inhomogeneous nitrogen-doping, are established by optical and X-ray methods. The effect of nitrogen on the polytype stability of SiC is the basis of the discussion of the experimental data. [Russian Text Ignored]" @default.
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• W2041965210 date "1976-09-16" @default.
• W2041965210 modified "2023-09-24" @default.
• W2041965210 title "Structural and morphological peculiarities of the epitaxial layers and monocrystals of silicon carbide highly doped by nitrogen" @default.
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• W2041965210 doi "https://doi.org/10.1002/pssa.2210370119" @default.
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