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- W2042156721 abstract "State-of-the-art device technologies of GaN power switching transistors are reviewed. The presented technologies solve the technical issues on GaN transistors for practical use replacing currently used Si-based power devices. Thick epitaxial growth over 6-inch Si substrates enables low cost fabrication of GaN devices with high breakdown voltages. A new operating principle for the normally-off GaN transistor called Gate Injection Transistor (GIT) is proposed in which hole injection from the p-type AlGaN gate increases the drain current by conductivity modulation. Six GITs are integrated onto a single chip on silicon as the world first GaN-based monolithic inverter IC. The inverter IC successfully drives a motor with low operating loss which is 42% reduced from that of the conventional IGBT (Insulated Gate Bipolar Transistor)-based one. These technologies are indispensable for wide-spread use of GaN power switching transistors in the future." @default.
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- W2042156721 date "2010-06-01" @default.
- W2042156721 modified "2023-10-07" @default.
- W2042156721 title "GaN power switching devices" @default.
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