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- W2042227644 abstract "Si films were selectively grown on non-electron-beam-irradiated areas of (011̄2) and (0001)α-Al 2 O 3 substrates and (100)γ-Al 2 O 3 on (100)Si structures by Si 2 H 6 gas-source molecular beam epitaxy (MBE) at growth temperatures from 700°C to 900°C. Si layers were not deposited on the areas exposed to an electron beam dose of more than 1.0×10 16 electrons/cm 2 using an electron-beam graphicsystem. The irradiated surface of Al 2 O 3 substrates was changed from the original surface to an oxygen-reduced surface. Most of the O atoms on the surface were removed at electron dose densities of more than 1×10 16 electrons/cm 2 , which agrees with the critical dose density for selective epitaxy. X-ray photoelectron spectroscopy (XPS) spectra also showed that the surface consisted of metal like Al instead of crystalline Al 2 O 3 after irradiation. The driving force of selective epitaxy can be considered to be the amorphous surface formed by electron irradiation." @default.
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- W2042227644 date "1993-06-01" @default.
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- W2042227644 title "Properties and Mechanism of Si Selective Epitaxial Growth on Al<sub>2</sub>O<sub>3</sub> using Electron Beam Irradiation" @default.
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- W2042227644 doi "https://doi.org/10.1143/jjap.32.2582" @default.
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