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- W2042255239 abstract "The reduction mechanism of threading dislocation at the interface of InGaN/low-temperature GaN (LT-GaN) layers was investigated by atomic force microscopy, transmission electron microscopy and secondary ion mass spectroscopy measurements. Introducing the LT-GaN intermediate layer onto the InGaN active layer not only prevented indium evaporation during the growth of the p-GaN layer but also suppressed the propagation of threading dislocations from InGaN to p-GaN. The propagation of threading dislocations is reduced by the formation of two-dimensional lateral islands, and further defect generation is prevented by the formation of InxGa1-xN alloy due to the relaxation of lattice mismatch between active InGaN and p-GaN." @default.
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- W2042255239 date "2002-03-15" @default.
- W2042255239 modified "2023-10-01" @default.
- W2042255239 title "Reduction of Threading Dislocations in InGaN/GaN Double Heterostructure through the Introduction of Low-Temperature GaN Intermediate Layer" @default.
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- W2042255239 doi "https://doi.org/10.1143/jjap.41.1253" @default.
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