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- W2042321875 abstract "One-dimensional III - V semiconductor nanostructures have attracted much attention due to their novel electrical and optical properties. In this work, InP semiconductor nanowires have been successfully synthesized by employing chemical vapor deposition method using In powder and red phosphorus as precursors. The morphology and structure of the products have been characterized by transmission electron microscopy (TEM), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), and energy dispersive spectroscopy (EDS). Cubic sphalerite structure of InP nanowires was established by selected area electron diffraction (SAED) and X-ray diffraction (XRD) characterization. The possible growth mechanism of the InP nanowires with stacking faults structures is briefly discussed." @default.
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- W2042321875 date "2013-09-01" @default.
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- W2042321875 title "Synthesis of InP semiconductor nanowires containing stacking faults structure" @default.
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- W2042321875 doi "https://doi.org/10.1016/j.matlet.2013.05.140" @default.
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