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- W2042419989 abstract "We report on the fabrication and the characterization of low-intensity ultraviolet metal–semiconductor–metal photodetectors based on AlGaN (0 ≤ x ≤ 0.44) with low threading dislocation density. Active layers were grown by organometallic vapor phase epitaxy on GaN. For comparison, AlGaN layers grown on sapphire were also prepared. Photodetectors on low threading dislocation layers present a very low dark current level, constant responsivity with optical power, a rejection over two orders of magnitude at the band gap, and an improved response speed. The results were uniform over the whole AlN mole fraction investigated. On the other hand, samples on sapphire present degraded behaviors when the AlN mole fraction becomes higher than 0.11." @default.
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- W2042419989 date "1999-11-01" @default.
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- W2042419989 title "Improvement of Low-Intensity Ultraviolet Photodetectors Based on AlGaN with Low Threading Dislocation Density" @default.
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- W2042419989 doi "https://doi.org/10.1002/(sici)1521-396x(199911)176:1<147::aid-pssa147>3.0.co;2-m" @default.
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