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- W2042533717 abstract "The present understanding of the point defects in GaAs and InP grown by molecular beam epitaxy at low temperature (LT) is briefly reviewed. New results on vacancies and ion-type acceptors obtained by positron annihilation are given. Depending on the growth temperature, Ga vacancies or small vacancy clusters are seen in LT GaAs in the concentration range 1018 cm−3. No signal from Ga antisites is found. The LT InP layers contain vacancies, identified as In vacancies, in the concentration range 1018 cm−3. Ion-type acceptors, probably In antisites, are also seen in concentrations of 1017 cm−3. The annealed layer contains small vacancy clusters." @default.
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- W2042533717 date "1993-12-01" @default.
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- W2042533717 title "Point defects in III–V materials grown by molecular beam epitaxy at low temperature" @default.
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- W2042533717 doi "https://doi.org/10.1016/0921-5107(93)90216-a" @default.
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