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• W2042605625 abstract "We present a theory of the mobility of electrons in real semiconductor quantum wells (QW's) made from lattice-mismatched epitaxial layers. In the case of zinc-blende structure QW's, we prove that besides the conventional scattering mechanisms, e.g., impurity doping, surface roughness, and alloy disorder there exists an ad hoc scattering source, which is due to a large fluctuating density of roughness-induced piezoelectric charges. Scattering by their piezoelectric field is found to be a new important scattering mechanism limiting the electron mobility of real strained QW's, especially those with a well thickness of the order of or greater than 50 AA{}. By incorporating this scattering into the theory, we are able to provide a perfect explanation for the low-temperature electron mobility measured in lattice-mismatched InGaAs-based QW's, which has not been understood starting from the so far-known scattering sources. The possibility of applying our theory to other lattice-mismatched systems such as Si/SiGe heterostructures and nitride-based QW's is outlined." @default.
• W2042605625 created "2016-06-24" @default.
• W2042605625 creator A5002619794 @default.
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• W2042605625 date "2003-11-21" @default.
• W2042605625 modified "2023-10-02" @default.
• W2042605625 title "Roughness-induced piezoelectric scattering in lattice-mismatched semiconductor quantum wells" @default.
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• W2042605625 doi "https://doi.org/10.1103/physrevb.68.195316" @default.
• W2042605625 hasPublicationYear "2003" @default.
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