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• W2042764650 abstract "Gate-all-around field-effect transistors are realized with thin, single-crystalline, pure-phase InAs nanowires grown by molecular beam epitaxy. At room temperature, the transistors show a desired high on-state current Ion of ∼10 μA and an on-off current ratio Ion/Ioff of as high as 106 at source-drain bias voltage of 50 mV and gate length of 1 μm with a gate underlap spacing of 1 μm from the source and from the drain. At low temperatures, the on-state current Ion is only slightly reduced, while the ratio Ion/Ioff is increased to 107. The field-effect mobility in the nanowire channels is also investigated and found to be ∼1500 cm2/V s at room temperature and ∼2000 cm2/V s at low temperatures. The excellent performance of the transistors is explained in terms of strong electrostatic and quantum confinements of carriers in the nanowires." @default.
• W2042764650 created "2016-06-24" @default.
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• W2042764650 date "2014-09-15" @default.
• W2042764650 modified "2023-10-14" @default.
• W2042764650 title "Suspended InAs nanowire gate-all-around field-effect transistors" @default.
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• W2042764650 doi "https://doi.org/10.1063/1.4896105" @default.
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