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• W2042778412 abstract "The InAs/GaAs quantum dot laser diodes and corresponding quantum dot samples are irradiated by 1 MeV electron. The laser performance and quantum dot photoluminescence intensity at room temperature are enhanced over a fluence range of 4 × 1013 cm−2. The radiation-induced defects increase the efficiency of carrier transfer to the quantum dots, which results in the improvement of photoluminescence performance under low level displacement damage. The contact resistant of quantum dot lasers decreases because the ohmic contact is also improved by electron irradiation." @default.
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• W2042778412 date "2012-07-09" @default.
• W2042778412 modified "2023-10-11" @default.
• W2042778412 title "Electron radiation effects on InAs/GaAs quantum dot lasers" @default.
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• W2042778412 doi "https://doi.org/10.1134/s1054660x12080051" @default.
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