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- W2042810950 abstract "Photolithographic processes on the unleveled surfaces of the silicon (Si) wafers which have been previous subjected to different micromachining steps are difficult or even impossible to be performed. To prevent this problem the paper proposes a derived method, socalled gray-tone lithography. The presented method takes into account the differences between the etching rates of Si and respectively silicon dioxide (SiO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> ) which is generally used as masking layer, in aqueous alkaline solutions like potassium or sodium hydroxide (NaOH or KOH). The deep of trenches is correlated with both SiO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> / Si etching rate and thickness ofthe SiO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> sacrificial layer." @default.
- W2042810950 created "2016-06-24" @default.
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- W2042810950 date "2007-10-01" @default.
- W2042810950 modified "2023-09-27" @default.
- W2042810950 title "A Gray-Tone Derived Lithography Method for Silicon Micromachining" @default.
- W2042810950 doi "https://doi.org/10.1109/smicnd.2007.4519661" @default.
- W2042810950 hasPublicationYear "2007" @default.
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