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- W2043100490 abstract "Atomic layer epitaxy (ALE) growth of InP was investigated using trimethylindium (TMI) and tertiarybutylphosphine (TBP) in a horizontal atmospheric reactor. The studied growth parameters were exposure times, TMI and TBP fluxes, and growth temperature. Self-limiting ALE growth of InP was achieved at a growth temperature of 340°C. Substantial increases in the TMI flux and higher growth temperatures exceeding 340°C resulted in growth rates exceeding 1 monolayer per cycle. Uniform ALE InP layers were verified by cross-sectional transmission electron micrography and sputtered Auger profiling. The application of thin ALE InP layers (15 Å) on GaAs surfaces was investigated using X-ray photoelectron spectroscopy, 77 K photoluminescence, and 300 K photoreflectance. The absence of arsenic oxide and an increase in the photoluminescence intensity by a factor of 2 were observed after InP passivation." @default.
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- W2043100490 date "1993-03-01" @default.
- W2043100490 modified "2023-10-16" @default.
- W2043100490 title "Atomic layer epitaxy of InP using trimethylindium and tertiarybutylphosphine" @default.
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- W2043100490 doi "https://doi.org/10.1016/0040-6090(93)90127-b" @default.
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