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- W2043124079 abstract "In this paper, we introduce the cylindrical coordinate based flicker noise model for Silicon NanoWire Field Effect Transistor (Si-NWFET) with Gate-All-Around (GAA) structure. For the accurate extraction of the volume trap density, N <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>t</sub> , with 1/f noise modeling, the parameters which represent the intrinsic channel properties are determined by rejecting the series resistance R <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>sd</sub> effect. Due to the random distribution of traps in Si-NWFETs, the 1/f noise data are obtained by averaging the drain current power spectral density, S <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>id</sub> , for several devices. By using the proposed 1/f model, the extracted volume trap density is compared for three different oxide processes (ISSG/RTO/GNOx) and verified by hot carrier stress test." @default.
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- W2043124079 date "2010-01-01" @default.
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- W2043124079 title "Characterization of Gate-All-Around Si-NWFET, including R<inf>sd</inf>, cylindrical coordinate based 1/f noise and hot carrier effects" @default.
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- W2043124079 doi "https://doi.org/10.1109/irps.2010.5488846" @default.
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