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• W2043241337 abstract "Abstract lnterfacial reactions of ultrahigh-vacuum-deposited (UHV) Cu thin films on Si, Ge and on epitaxial Si–Ge layers on Si and Ge are reviewed. Both aligned and twinned epitaxial Cu thin films have been grown on (1 1 1)Si at room temperature. An interface compound, CuSi x , with x = 11.2 – 14  at%, was observed to be present at the Cu/Si interface. η″ -Cu 3 Si was found to form in samples annealed at 200 °C for 1 h. Preferentially oriented η″ -Cu 3 Si is the only phase present in samples annealed at 200–800 °C. In the samples annealed at or higher than 850 °C, a mixture of η′ -Cu 3 Si and η″ -Cu 3 Si was found to be present. The effects of substrate cleaning and film thickness on the epitaxial growth of UHV deposited Cu thin films were found on (0 0 1)Si. In as-deposited samples, Cu films were found to grow preferentially along the [1 1 1] direction on atomically clean (2×1)(0 0 1)Si reconstructed surface and grow along the [0 0 1] direction on hydrogen terminated (0 0 1)Si. The Cu lattice is rotated by 45 ° relative to Si along the [0 0 1]Cu/[0 0 1]Si axis. The alignment of the Cu overlayer was found to improve with the distance from the Cu/Si interface. Epitaxial Cu and epitaxial ζ -Cu 5 Ge were found to form in as-deposited Cu/ epitaxial-Ge(e-Ge)/(1 1 1)Ge and Cu/e-Ge/(1 1 1)Si. On the other hand, textured Cu was found to form in the other systems. Polycrystalline e 1-Cu 3 Ge and e 1-Cu 3 (Si 1− x Ge x ) were the only phases formed in 150–500 °C annealed Cu/Ge and (Cu/e–Ge/Si and Cu/Si–Ge alloys) systems, respectively. They were found to agglomerate at 550 °C. The room-temperature oxidation of substrate in the presence of Cu 3 (Si 1− x Ge x ) was found only in the Cu/Si 0.7 Ge 0.3 system. From the sheet resistance measurement, e 1-Cu 3 Ge has the lowest resistivity of 7 μΩ-cm after the 400 °C annealing. The electrical resistivity was found to decrease with the Ge content." @default.
• W2043241337 created "2016-06-24" @default.
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• W2043241337 date "2004-01-01" @default.
• W2043241337 modified "2023-10-17" @default.
• W2043241337 title "Interfacial reactions of ultrahigh-vacuum-deposited Cu thin films on Si, Ge and on epitaxial Si–Ge layers on Si and Ge" @default.
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• W2043241337 doi "https://doi.org/10.1016/j.mssp.2004.06.003" @default.
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