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- W2043281428 abstract "A plasma treatment on solid-phase-crystallized (SPC) poly-Si thin-film transistors (TFTs) has been demonstrated. Using this technique, fluorine atoms can be introduced into the poly-Si film to passivate the defects, and hence, the device performance of the SPC poly-Si TFTs can be significantly improved. The fluorinated SPC poly-Si TFTs exhibit a good subthreshold slope, low threshold voltage, and high field effect mobility. Moreover, the fluorinated SPC poly-Si TFTs also exhibit an improved hot-carrier-stress immunity, which is due to the strong Si-F bonds formed in the poly-Si channel region." @default.
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- W2043281428 date "2005-01-01" @default.
- W2043281428 modified "2023-10-14" @default.
- W2043281428 title "CF[sub 4] Plasma Treatment for Fabricating High-Performance and Reliable Solid-Phase-Crystallized Poly-Si TFTs" @default.
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- W2043281428 doi "https://doi.org/10.1149/1.1955166" @default.
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