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• W2043283387 endingPage "084503" @default.
• W2043283387 startingPage "084503" @default.
• W2043283387 abstract "HfZnO thin films with various Hf contents are sputter-deposited on glass substrates from HfxZn1−xO (x = 0, 2.5, 5, 7.5, and 10 at. %) targets at room temperature. The incorporation of Hf in the ZnO film leads to the amorphorization of the materials. The amorphous structures of high-Hf-content films remain after annealing at 600 °C for 30 min. The built-in stresses of as-deposited films are compressive. As the annealing temperature increases, the stresses are relaxed and even become tensile. The films exhibit a high transmission of 80% in the visible region. The optical bandgap increases with the Hf content, but it decreases with the annealing temperature. This can be attributed to the alteration of strain (stress) status in the films and atomic substitution. The reduction of bandgap partly results from the grain growth, which is due to the quantum confinement effect of the small grains. Hf doping increases the resistivity of ZnO owing to the disorder of the material structure and the higher bandgap, which result in more carrier traps and less thermally excited carriers in the conduction bands." @default.
• W2043283387 created "2016-06-24" @default.
• W2043283387 creator A5037535777 @default.
• W2043283387 creator A5041568517 @default.
• W2043283387 creator A5081165207 @default.
• W2043283387 date "2013-08-28" @default.
• W2043283387 modified "2023-09-23" @default.
• W2043283387 title "Transitions of bandgap and built-in stress for sputtered HfZnO thin films after thermal treatments" @default.
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• W2043283387 doi "https://doi.org/10.1063/1.4819232" @default.
• W2043283387 hasPublicationYear "2013" @default.
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