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• W2043340666 abstract "Edge-photovoltage measurements of InAs/GaAs 1.3 µm dot-in-a-well structures clearly show a ground state (GS) transverse magnetic (TM) absorption. Based on eight-band k.p calculations we attribute this GS TM absorption peak to transitions between GS electrons and low-lying excited hole states which possess a significant light-hole component of the correct symmetry to recombine with the GS electrons." @default.
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• W2043340666 date "2012-11-30" @default.
• W2043340666 modified "2023-09-24" @default.
• W2043340666 title "Long wavelength transverse magnetic polarized absorption in 1.3 µm InAs/InGaAs dots-in-a-well type active regions" @default.
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• W2043340666 doi "https://doi.org/10.1088/0268-1242/28/1/015012" @default.
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