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- W2043374016 abstract "InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with 800 °C- and 1000 °C-grown p-GaN cap layers were fabricated. Inductively coupled plasma (ICP) using Cl2/BCl3/Ar was used to etch the surface of the InGaN/GaN LEDs. Different compositions of the Cl2/BCl3/Ar gas system were used to reduce surface roughness after the plasma etching process, that results from the low-temperature (800 °C)-grown p-type GaN with a higher hole concentration. The maximum etching rate (~6000 A/min) was attained approximately 10% BCl3 in Cl2/BCl3/Ar plasma. Sputter desorption and surface morphology are significantly improved. Furthermore, surface oxidation is suppressed." @default.
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- W2043374016 date "2006-09-07" @default.
- W2043374016 modified "2023-10-14" @default.
- W2043374016 title "Inductively Coupled Plasma Mesa Etched InGaN/GaN Light Emitting Diodes Using Cl2/BCl3/Ar Plasma" @default.
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- W2043374016 doi "https://doi.org/10.1143/jjap.45.6800" @default.
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