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- W2043485362 abstract "The enhanced photoluminescence of direct transition is observed on (100), (110), and (111) Ge under biaxial tensile strain. The enhancement is caused by the increase in electron population in the Γ valley. The shrinkage of energy difference between the lowest L valleys and the Γ valley is responsible to the population increase on (100) and (110) Ge. For (111) Ge, the energy difference increases under biaxial tensile strain but the strain decreases energy difference between the electron quasi-Fermi level and the Γ valley due to the small density of state of the lowest L valleys, and thus enhances direct recombination." @default.
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- W2043485362 date "2011-03-07" @default.
- W2043485362 modified "2023-09-26" @default.
- W2043485362 title "Biaxial tensile strain effects on photoluminescence of different orientated Ge wafers" @default.
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- W2043485362 doi "https://doi.org/10.1063/1.3562589" @default.
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