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- W2043513307 abstract "Thin vanadium nitride (VN) layers were grown by atomic layer deposition using tetrakis(ethylmethylamino)vanadium and NH3 plasma at deposition temperatures between 70 °C and 150 °C on silicon substrates and polymer foil. X-ray photoelectron spectroscopy revealed a composition close to stoichiometric VN, while x-ray diffraction showed the δ-VN crystal structure. The resistivity was as low as 200 μΩ cm for the as deposited films and further reduced to 143 μΩ cm and 93 μΩ cm by annealing in N2 and H2/He/N2, respectively. A 5 nm VN layer proved to be effective as a diffusion barrier for copper up to a temperature of 720 °C." @default.
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- W2043513307 date "2013-03-18" @default.
- W2043513307 modified "2023-09-30" @default.
- W2043513307 title "Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers" @default.
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- W2043513307 doi "https://doi.org/10.1063/1.4798337" @default.
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