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• W2043671808 endingPage "365603" @default.
• W2043671808 startingPage "365603" @default.
• W2043671808 abstract "The chemical vapor deposition of monolayer and few-layer transition metal dichalcogenides is a rapidly developing area of materials science due to the exciting electrical, optical, thermal and mechanical properties of transition metal dichalcogenides in their layered form. These properties make these innovative materials potentially relevant to wide-ranging commercial applications. One of these promising materials is MoSe₂; however, just recently, a few research groups have been able to demonstrate its synthesis via chemical vapor deposition. Moreover, only oriented few-layer MoSe₂ has been exhibited by synthetically formed material using chemical vapor deposition thus far. Here, we confirm twisted-layer MoSe₂ can also form during chemical vapor deposition. Twisted-layer transition metal dichalcogenides alter their properties as compared to their oriented counterparts. Therefore, twisted-layer structures are of interest because they can tune their properties." @default.
• W2043671808 created "2016-06-24" @default.
• W2043671808 creator A5009069969 @default.
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• W2043671808 date "2014-08-20" @default.
• W2043671808 modified "2023-10-06" @default.
• W2043671808 title "Chemical vapor deposition of twisted bilayer and few-layer MoSe₂over SiO_<i>x</i>substrates" @default.
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• W2043671808 doi "https://doi.org/10.1088/0957-4484/25/36/365603" @default.
• W2043671808 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/25140896" @default.
• W2043671808 hasPublicationYear "2014" @default.
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