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- W2043688051 abstract "The growth of As overlayers on InP(110) surfaces was investigated by XPS, UPS and LEED. Arsenic layers deposited at room temperature do not show crystallographic order, as derived from the suppression of the substrate (1 × 1) LEED pattern. With XPS no chemical interface reaction is detectable. The pinning of the Fermi level at the surface for n- and p-type material is investigated by UPS. Annealing to 320°C leads to a desorption of As multilayers. Simultaneously at those temperatures a crystalline surface layer of the type InP1−x Asx(x ≈ 0.5) with a (1 × 1) LEED pattern is formed where the P atoms are exchanged for As atoms. The electronic properties of the interface are discussed in comparison with InAs." @default.
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- W2043688051 date "1989-04-01" @default.
- W2043688051 modified "2023-09-25" @default.
- W2043688051 title "Growth of As layers on InP(110)" @default.
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- W2043688051 doi "https://doi.org/10.1016/0039-6028(89)90867-4" @default.
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