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- W2043784402 endingPage "413" @default.
- W2043784402 startingPage "323" @default.
- W2043784402 abstract "Indium Selenide (InSe) has attracted widespread attention due to its excellent optoelectronic properties. Band-gap engineering provides opportunities for the application of InSe materials in the field of optoelectronics. Herein, the substitution of dopant Te atoms for Se atoms in the InSe monolayers was investigated. It was found that substitutional doping can provide an effective way to adjust the electronic structure and improve the performance of InSe monolayer semiconductor. Accordingly, increasing the concentration of the Te dopant brings a transition from the indirect to the direct band gap. Specifically, the transition occurs when the Te concentration is around 33%. With the gradual increase of the Te concentration, the band gap increased initially and then decreased. The band gap reached a maximum of 1.64 eV at a Te concentration of 33.3% and then gradually decreased to 1.08 eV beyond the maximum dopant concentration. These results showcase the controllable and changeable band gap of the InSe semiconductor and open up a new way for the potential application of InSe as a competent candidate in optoelectronic devices." @default.
- W2043784402 created "2016-06-24" @default.
- W2043784402 creator A5047420518 @default.
- W2043784402 creator A5049989039 @default.
- W2043784402 creator A5089763497 @default.
- W2043784402 date "1982-01-01" @default.
- W2043784402 modified "2023-09-27" @default.
- W2043784402 title "Growth and characterization of III–VI layered crystals like GaSe, GaTe, InSe, GaSe1-xTex and GaxIn1-xSe" @default.
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