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• W2043838463 endingPage "04C138" @default.
• W2043838463 startingPage "04C138" @default.
• W2043838463 abstract "We synthesized nickel mono-silicide nanowires (NiSi-NWs) on electron-beam-evaporated Ni films with SiH4/H2 gases in a chemical-vapor-deposition chamber, and studied the growth mechanism of NiSi-NW by investigating various synthesis conditions. Results show that NiO and Ni2O3 phases coexist on nickel surface and agglomerate after heating and the initial growth of NiSi-NW is triggered by the Ni2O3. The effects of these surface nickel-oxides on NiSi-NW growth were investigated, and a synthesis model based-on vapor–liquid–solid mechanism with the aid of nickel diffusion to initiate NiSi-NW synthesis is proposed. It is also found that the diameter of NiSi-NW is mainly controlled by the synthesis temperature and the activation energy of NiSi-NW formation is estimated to be 1.72 eV." @default.
• W2043838463 created "2016-06-24" @default.
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• W2043838463 date "2009-04-20" @default.
• W2043838463 modified "2023-09-26" @default.
• W2043838463 title "Synthesis of Nickel Mono-Silicide Nanowire by Chemical Vapor Deposition on Nickel Film: Role of Surface Nickel Oxides" @default.
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• W2043838463 doi "https://doi.org/10.1143/jjap.48.04c138" @default.
• W2043838463 hasPublicationYear "2009" @default.
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