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• W2043864295 abstract "Effects of tin doping on crystallization of amorphous silicon were studied using Raman scattering, Auger spectroscopy, scanning electron microscopy, and X-ray fluorescence techniques. Formation of silicon nanocrystals (2–4 nm in size) in the amorphous matrix of Si1−xSnx, obtained by physical vapor deposition of the components in vacuum, was observed at temperatures around 300 °C. The aggregate volume of nanocrystals in the deposited film of Si1−xSnx exceeded 60% of the total film volume and correlated well with the tin content. Formation of structures with ∼80% partial volume of the nanocrystalline phase was also demonstrated. Tin-induced crystallization of amorphous silicon occurred only around the clusters of metallic tin, which suggested the crystallization mechanism involving an interfacial molten Si:Sn layer." @default.
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• W2043864295 date "2013-12-07" @default.
• W2043864295 modified "2023-10-16" @default.
• W2043864295 title "Tin induced a-Si crystallization in thin films of Si-Sn alloys" @default.
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• W2043864295 doi "https://doi.org/10.1063/1.4837661" @default.
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