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• W2043953282 abstract "The evolution of the morphology and the texture of 3C-SiC films grown by chemical vapor deposition (CVD), using 1,3-disilabutane as precursor, on Si(100) substrates is investigated by transmission electron microscopy. Films were found to exhibit a columnar grain structure with a strong <111> fiber texture and a high density of stacking faults and twins. The columnar grains do not originate at the substrate surface but on a buffer layer about 3 to 5 nm thick, consisting of interconnected 3D-islands that initiate as epitaxial nuclei. The change from <100> epitaxial islands to <111> columnar grains can be understood in terms of anisotropic growth rates and multiple twinning. The observed <111> fiber texture, faulted substructure, faceted surface morphology and carbon enrichment of the growth surface are in agreement with the proposed growth model." @default.
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• W2043953282 date "2007-01-01" @default.
• W2043953282 modified "2023-09-27" @default.
• W2043953282 title "Formation of <111> fiber texture in β-SiC films deposited on Si(100) substrates" @default.
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• W2043953282 doi "https://doi.org/10.1016/j.diamond.2006.03.017" @default.
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