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- W2043967503 abstract "A new measurement method for GaN films and their Schottky contacts is reported in this paper. Instead of the fabrication of Ohmic contacts, this measurement is based on a special back-to-back Schottky diode that has a rectifying character. A mathematical model indicates that the electronic parameters of the materials can be deduced from the device's I–V data. In the experiment of an unintentionally doped n-type GaN layer with a residual carrier density 7 × 1016 cm−3, the analysis by the new method gives the layer's sheet resistance ρs = 497 Ω, the electron mobility μn = 613 cm2 V−1 s−1 and the ideality factor of the Ni/Au–GaN Schottky contacts n = 2.5, which are close to the data obtained by the traditional measurements: ρs = 505 Ω, μn = 585 cm2 V−1 s−1 and n = 3.0. The method reported can be adopted not only for GaN films but also for other semiconductor materials, especially in the cases where Ohmic contacts of high quality are hard to make or their fabricating process affects the film's character." @default.
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- W2043967503 date "2005-04-27" @default.
- W2043967503 modified "2023-09-26" @default.
- W2043967503 title "Back-to-back Schottky diode adopted for the measurement of GaN films and its Schottky contacts" @default.
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- W2043967503 doi "https://doi.org/10.1088/0268-1242/20/6/021" @default.
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