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- W2044003855 abstract "A junctionless-accumulation-mode (JAM) p-channel MOSFET is successfully implemented based on a junction-isolated bulk FinFET for the first time. The JAM devices with a fin width of 16 nm show outstanding transfer characteristics: 1) subthreshold swing (SS <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>min</sub> ) = 68 mV/dec; 2) drain-induced-barrier-lowering is 9 mV/V; and 3) I <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>ON</sub> /I <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>OFF</sub> ratio >1 × 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>6</sup> . The JAM devices with smaller fin widths or longer gate lengths give superior short-channel characteristics and higher threshold voltages (V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>th</sub> ) due to their enhanced gate electrostatic controllability. The reverse back bias modulates V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>th</sub> and SS favorably by virtue of a body-tied device, maintaining the substrate current due to junction leakage of <;1 × 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-11</sup> A." @default.
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- W2044003855 date "2013-12-01" @default.
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- W2044003855 title "First Demonstration of Junctionless Accumulation-Mode Bulk FinFETs With Robust Junction Isolation" @default.
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- W2044003855 doi "https://doi.org/10.1109/led.2013.2283291" @default.
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