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- W2044104246 abstract "We report on the fabrication and characterization of phototransistors based on AlGaN/GaN heterostructure grown over 6H-SiC substrates. The device has two functions: as a high electron mobility transistor (HEMT) and an ultraviolet photodetector at the same time. As an HEMT, its maximum transconductance is 170 mS/mm, while the minimum cutoff frequency fT and the maximum oscillation frequency fm are 19 and 35 GHz, respectively. As a photodetector, the device is visible blind, with an ultraviolet/green contrast of three orders of magnitude, and a responsivity as high as 1700 A/W at the wavelength of 362 nm." @default.
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- W2044104246 date "2007-08-23" @default.
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- W2044104246 title "Ultraviolet Phototransistors on AlGaN/GaN Heterostructures" @default.
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- W2044104246 doi "https://doi.org/10.1088/0256-307x/24/9/068" @default.
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